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DMG6601LVT-7

Description:
MOSFET N/P-CH 30V 26TSOT
Manufacturer:
Diodes Incorporated
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DMG6601LVT-7

Product Information

Category
FETs - Arrays
Packaging
Cut Tape (CT)
Series
-
FET Type
N and P-Channel
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
3.8A, 2.5A
Rds On (Max) @ Id, Vgs
55 mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Gate Charge (Qg) @ Vgs
12.3nC @ 10V
Input Capacitance (Ciss) @ Vds
422pF @ 15V
Power - Max
850mW
Mounting Type
Surface Mount
Package / Case
SOT-23-6 Thin, TSOT-23-6
Supplier Device Package
TSOT-26

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