BSO615C G
- Description：
- MOSFET N/P-CH 60V 3.1A/2A 8SOIC
- Manufacturer：
- Infineon Technologies
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Product Information
- Category
- FETs - Arrays
- Packaging
- Cut Tape (CT)
- Series
- SIPMOS®
- FET Type
- N and P-Channel
- FET Feature
- Logic Level Gate
- Drain to Source Voltage (Vdss)
- 60V
- Current - Continuous Drain (Id) @ 25°C
- 3.1A, 2A
- Rds On (Max) @ Id, Vgs
- 110 mOhm @ 3.1A, 10V
- Vgs(th) (Max) @ Id
- 2V @ 20µA
- Gate Charge (Qg) @ Vgs
- 22.5nC @ 10V
- Input Capacitance (Ciss) @ Vds
- 380pF @ 25V
- Power - Max
- 2W
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package
- PG-DSO-8
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