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BSO615C G

Description:
MOSFET N/P-CH 60V 3.1A/2A 8SOIC
Manufacturer:
Infineon Technologies
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BSO615C G

Product Information

Category
FETs - Arrays
Packaging
Tape & Reel (TR)
Series
SIPMOS®
FET Type
N and P-Channel
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25°C
3.1A, 2A
Rds On (Max) @ Id, Vgs
110 mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id
2V @ 20µA
Gate Charge (Qg) @ Vgs
22.5nC @ 10V
Input Capacitance (Ciss) @ Vds
380pF @ 25V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
PG-DSO-8

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