NTMD6N02R2G
- Description：
- MOSFET PWR N-CH DL 3.92A 20V 8SO
- Manufacturer：
- ON Semiconductor
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Product Information
- Category
- FETs - Arrays
- Packaging
- Cut Tape (CT)
- Series
- -
- FET Type
- 2 N-Channel (Dual)
- FET Feature
- Logic Level Gate
- Drain to Source Voltage (Vdss)
- 20V
- Current - Continuous Drain (Id) @ 25°C
- 3.92A
- Rds On (Max) @ Id, Vgs
- 35 mOhm @ 6A, 4.5V
- Vgs(th) (Max) @ Id
- 1.2V @ 250µA
- Gate Charge (Qg) @ Vgs
- 20nC @ 4.5V
- Input Capacitance (Ciss) @ Vds
- 1100pF @ 16V
- Power - Max
- 730mW
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package
- 8-SOIC N
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