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NTMD6N02R2G

Description:
MOSFET PWR N-CH DL 3.92A 20V 8SO
Manufacturer:
ON Semiconductor
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NTMD6N02R2G

Product Information

Category
FETs - Arrays
Packaging
Cut Tape (CT)
Series
-
FET Type
2 N-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
3.92A
Rds On (Max) @ Id, Vgs
35 mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id
1.2V @ 250µA
Gate Charge (Qg) @ Vgs
20nC @ 4.5V
Input Capacitance (Ciss) @ Vds
1100pF @ 16V
Power - Max
730mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SOIC N

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