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BSO615N G
BSO615N G
Description:
MOSFET DUAL N-CH 60V 2.6A 8-SOIC
Manufacturer:
Infineon Technologies
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BSO615N G
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BSO615N G
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Product Information
Category
FETs - Arrays
Packaging
Cut Tape (CT)
Series
SIPMOS®
FET Type
2 N-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25°C
2.6A
Rds On (Max) @ Id, Vgs
150 mOhm @ 2.6A, 4.5V
Vgs(th) (Max) @ Id
2V @ 20µA
Gate Charge (Qg) @ Vgs
20nC @ 10V
Input Capacitance (Ciss) @ Vds
380pF @ 25V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
PG-DSO-8
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