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US6M2TR

Description:
MOSFET N+P 20V 1.5A/1A TUMT6
Manufacturer:
Rohm Semiconductor
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US6M2TR

Product Information

Category
FETs - Arrays
Packaging
Cut Tape (CT)
Series
-
FET Type
N and P-Channel
FET Feature
Standard
Drain to Source Voltage (Vdss)
30V, 20V
Current - Continuous Drain (Id) @ 25°C
1.5A, 1A
Rds On (Max) @ Id, Vgs
240 mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 1mA
Gate Charge (Qg) @ Vgs
2.2nC @ 4.5V
Input Capacitance (Ciss) @ Vds
80pF @ 10V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
6-SMD, Flat Leads
Supplier Device Package
TUMT6

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