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US6M1TR
US6M1TR
Description:
MOSFET N+P 30,20V 1A TUMT6
Manufacturer:
Rohm Semiconductor
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US6M1TR
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US6M1TR
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Product Information
Category
FETs - Arrays
Packaging
Cut Tape (CT)
Series
-
FET Type
N and P-Channel
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
30V, 20V
Current - Continuous Drain (Id) @ 25°C
1.4A, 1A
Rds On (Max) @ Id, Vgs
240 mOhm @ 1.4A, 10V
Vgs(th) (Max) @ Id
2.5V @ 1mA
Gate Charge (Qg) @ Vgs
2nC @ 5V
Input Capacitance (Ciss) @ Vds
70pF @ 10V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
6-SMD, Flat Leads
Supplier Device Package
TUMT6
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