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SI1922EDH-T1-GE3

Description:
MOSFET N-CH 20V DUAL SOT-363
Manufacturer:
Vishay Siliconix
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SI1922EDH-T1-GE3

Product Information

Category
FETs - Arrays
Packaging
Cut Tape (CT)
Series
TrenchFET®
FET Type
2 N-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
1.3A
Rds On (Max) @ Id, Vgs
198 mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) @ Vgs
2.5nC @ 8V
Input Capacitance (Ciss) @ Vds
-
Power - Max
1.25W
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Supplier Device Package
SC-70-6 (SOT-363)

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