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SI4900DY-T1-E3

Description:
MOSFET N-CH DUAL 60V 5.3A 8-SOIC
Manufacturer:
Vishay Siliconix
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SI4900DY-T1-E3

Product Information

Category
FETs - Arrays
Packaging
Cut Tape (CT)
Series
TrenchFET®
FET Type
2 N-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25°C
5.3A
Rds On (Max) @ Id, Vgs
58 mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) @ Vgs
20nC @ 10V
Input Capacitance (Ciss) @ Vds
665pF @ 15V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SOIC N

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