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SI4931DY-T1-E3

Description:
MOSFET P-CH DUAL 12V 6.7A 8-SOIC
Manufacturer:
Vishay Siliconix
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SI4931DY-T1-E3

Product Information

Category
FETs - Arrays
Packaging
Cut Tape (CT)
Series
TrenchFET®
FET Type
2 P-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
12V
Current - Continuous Drain (Id) @ 25°C
6.7A
Rds On (Max) @ Id, Vgs
18 mOhm @ 8.9A, 4.5V
Vgs(th) (Max) @ Id
1V @ 350µA
Gate Charge (Qg) @ Vgs
52nC @ 4.5V
Input Capacitance (Ciss) @ Vds
-
Power - Max
1.1W
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SOIC N

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