QS6K1TR
- Description：
- MOSFET 2N-CH 30V 1A TSMT6
- Manufacturer：
- Rohm Semiconductor
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Product Information
- Category
- FETs - Arrays
- Packaging
- Cut Tape (CT)
- Series
- -
- FET Type
- 2 N-Channel (Dual)
- FET Feature
- Logic Level Gate
- Drain to Source Voltage (Vdss)
- 30V
- Current - Continuous Drain (Id) @ 25°C
- 1A
- Rds On (Max) @ Id, Vgs
- 238 mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id
- 1.5V @ 1mA
- Gate Charge (Qg) @ Vgs
- 2.4nC @ 4.5V
- Input Capacitance (Ciss) @ Vds
- 77pF @ 10V
- Power - Max
- 1.25W
- Mounting Type
- Surface Mount
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package
- TSMT6
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