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TPS1120DR
TPS1120DR
Description:
MOSFET 2P-CH 15V 1.17A 8-SOIC
Manufacturer:
Texas Instruments
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TPS1120DR
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TPS1120DR
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Product Information
Category
FETs - Arrays
Packaging
Tape & Reel (TR)
Series
-
FET Type
2 P-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
15V
Current - Continuous Drain (Id) @ 25°C
1.17A
Rds On (Max) @ Id, Vgs
180 mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Gate Charge (Qg) @ Vgs
5.45nC @ 10V
Input Capacitance (Ciss) @ Vds
-
Power - Max
840mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SOIC
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