1N8031-GA
- Description：
- DIODE SCHOTTKY 650V 1A TO276
- Manufacturer：
- GeneSiC Semiconductor
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Product Information
- Category
- Diodes, Rectifiers - Single
- Packaging
- Tube
- Series
- -
- Diode Type
- Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max)
- 650V
- Current - Average Rectified (Io)
- 1A
- Voltage - Forward (Vf) (Max) @ If
- 1.5V @ 1A
- Speed
- No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr)
- 0ns
- Current - Reverse Leakage @ Vr
- 5µA @ 650V
- Capacitance @ Vr, F
- 76pF @ 1V, 1MHz
- Thermal Resistance
- 3.55°C/W Jc
- Mounting Type
- Through Hole
- Package / Case
- TO-276AA
- Supplier Device Package
- TO-276
- Operating Temperature - Junction
- -55°C ~ 250°C
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