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RN1412TE85LF

Description:
TRANSISTOR NPN S-MINI
Manufacturer:
Toshiba Semiconductor and Storage
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RN1412TE85LF

Product Information

Category
Transistors (BJT) - Single, Pre-Biased
Packaging
Tape & Reel (TR)
Series
-
Transistor Type
NPN - Pre-Biased
Current - Collector (Ic) (Max)
100mA
Voltage - Collector Emitter Breakdown (Max)
50V
Resistor - Base (R1) (Ohms)
22k
Resistor - Emitter Base (R2) (Ohms)
47k
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)
100nA (ICBO)
Frequency - Transition
250MHz
Power - Max
200mW
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
S-Mini

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