RN1310(TE85L,F)
- Description：
- TRANSISTOR NPN USM
- Manufacturer：
- Toshiba Semiconductor and Storage
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Product Information
- Packaging
- Cut Tape (CT)
- Series
- -
- Transistor Type
- NPN - Pre-Biased
- Current - Collector (Ic) (Max)
- 100mA
- Voltage - Collector Emitter Breakdown (Max)
- 50V
- Resistor - Base (R1) (Ohms)
- 4.7k
- Resistor - Emitter Base (R2) (Ohms)
- -
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic
- 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max)
- 100nA (ICBO)
- Frequency - Transition
- 250MHz
- Power - Max
- 100mW
- Mounting Type
- Surface Mount
- Package / Case
- SC-70, SOT-323
- Supplier Device Package
- USM
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