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RN1110MFV(TL3,T)

Description:
TRANSISTOR NPN VESM
Manufacturer:
Toshiba Semiconductor and Storage
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RN1110MFV(TL3,T)

Product Information

Category
Transistors (BJT) - Single, Pre-Biased
Packaging
Cut Tape (CT)
Series
-
Transistor Type
NPN - Pre-Biased
Current - Collector (Ic) (Max)
100mA
Voltage - Collector Emitter Breakdown (Max)
50V
Resistor - Base (R1) (Ohms)
4.7k
Resistor - Emitter Base (R2) (Ohms)
-
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 500µA, 5mA
Current - Collector Cutoff (Max)
100nA (ICBO)
Frequency - Transition
-
Power - Max
150mW
Mounting Type
Surface Mount
Package / Case
SOT-723
Supplier Device Package
VESM

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