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DTD113ZUT106

Description:
TRANS PREBIAS NPN 200MW UMT3
Manufacturer:
Rohm Semiconductor
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DTD113ZUT106

Product Information

Category
Transistors (BJT) - Single, Pre-Biased
Packaging
Cut Tape (CT)
Series
-
Transistor Type
NPN - Pre-Biased
Current - Collector (Ic) (Max)
500mA
Voltage - Collector Emitter Breakdown (Max)
50V
Resistor - Base (R1) (Ohms)
1K
Resistor - Emitter Base (R2) (Ohms)
10k
DC Current Gain (hFE) (Min) @ Ic, Vce
82 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max)
500nA
Frequency - Transition
200MHz
Power - Max
200mW
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Supplier Device Package
UMT3

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