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PDTD123ES,126

Description:
TRANS PREBIAS NPN 500MW TO92-3
Manufacturer:
NXP Semiconductors
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PDTD123ES,126

Product Information

Category
Transistors (BJT) - Single, Pre-Biased
Packaging
Tape & Box (TB)
Series
-
Transistor Type
NPN - Pre-Biased
Current - Collector (Ic) (Max)
500mA
Voltage - Collector Emitter Breakdown (Max)
50V
Resistor - Base (R1) (Ohms)
2.2k
Resistor - Emitter Base (R2) (Ohms)
2.2k
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max)
500nA
Frequency - Transition
-
Power - Max
500mW
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package
TO-92-3

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