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BCR 112 E6327

Description:
TRANSISTOR NPN DGTL AF SOT-23
Manufacturer:
Infineon Technologies
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BCR 112 E6327

Product Information

Category
Transistors (BJT) - Single, Pre-Biased
Packaging
Cut Tape (CT)
Series
-
Transistor Type
NPN - Pre-Biased
Current - Collector (Ic) (Max)
100mA
Voltage - Collector Emitter Breakdown (Max)
50V
Resistor - Base (R1) (Ohms)
4.7k
Resistor - Emitter Base (R2) (Ohms)
4.7k
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 500µA, 10mA
Current - Collector Cutoff (Max)
-
Frequency - Transition
140MHz
Power - Max
200mW
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
PG-SOT23-3

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