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2SD1221-Y(Q)

Description:
TRANSISTOR NPN 60V 3A PW MOLD
Manufacturer:
Toshiba Semiconductor and Storage
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2SD1221-Y(Q)

Product Information

Category
Transistors (BJT) - Single
Packaging
Bulk
Series
-
Transistor Type
NPN
Current - Collector (Ic) (Max)
3A
Voltage - Collector Emitter Breakdown (Max)
60V
Vce Saturation (Max) @ Ib, Ic
1V @ 300mA, 3A
Current - Collector Cutoff (Max)
-
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 500mA, 5V
Power - Max
1W
Frequency - Transition
3MHz
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
PW-MOLD

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