EMF8T2R
- Description：
- TRANS PREBIAS DUAL NPN EMT6
- Manufacturer：
- Rohm Semiconductor
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Product Information
- Packaging
- Tape & Reel (TR)
- Series
- -
- Transistor Type
- 1 NPN Pre-Biased, 1 NPN
- Current - Collector (Ic) (Max)
- 100mA, 500mA
- Voltage - Collector Emitter Breakdown (Max)
- 50V, 12V
- Resistor - Base (R1) (Ohms)
- 47k
- Resistor - Emitter Base (R2) (Ohms)
- 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 68 @ 5mA, 5V / 270 @ 10mA, 2V
- Vce Saturation (Max) @ Ib, Ic
- 300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA
- Current - Collector Cutoff (Max)
- 500nA
- Frequency - Transition
- 250MHz, 320MHz
- Power - Max
- 150mW
- Mounting Type
- Surface Mount
- Package / Case
- SOT-563, SOT-666
- Supplier Device Package
- EMT6
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