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MS2200

Description:
TRANS RF BIPO 1167W 43.2A MS102
Manufacturer:
Microsemi Power Products Group
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MS2200

Product Information

Category
RF Transistors (BJT)
Packaging
*
Series
-
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
65V
Frequency - Transition
400MHz ~ 500MHz
Noise Figure (dB Typ @ f)
-
Gain
9.7dB
Power - Max
1167W
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 5A, 5V
Current - Collector (Ic) (Max)
43.2A
Mounting Type
*
Package / Case
*
Supplier Device Package
*

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