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NE662M04-A

Description:
TRANSISTOR NPN 2GHZ M04
Manufacturer:
CEL
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NE662M04-A

Product Information

Category
RF Transistors (BJT)
Packaging
Bulk
Series
-
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
3.3V
Frequency - Transition
25GHz
Noise Figure (dB Typ @ f)
1.1dB ~ 1.5dB @ 2GHz
Gain
20dB
Power - Max
115mW
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 5mA, 2V
Current - Collector (Ic) (Max)
35mA
Mounting Type
Surface Mount
Package / Case
SOT-343F
Supplier Device Package
M04

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