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HN3C10FUTE85LF

Description:
TRANSISTOR NPN US6
Manufacturer:
Toshiba Semiconductor and Storage
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HN3C10FUTE85LF

Product Information

Category
RF Transistors (BJT)
Packaging
Cut Tape (CT)
Series
-
Transistor Type
2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max)
12V
Frequency - Transition
7GHz
Noise Figure (dB Typ @ f)
1.1dB @ 1GHz
Gain
11.5dB
Power - Max
200mW
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 20mA, 10V
Current - Collector (Ic) (Max)
80mA
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Supplier Device Package
US6

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