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EMD30T2R

Description:
TRANS PREBIAS NPN/PNP EMT6
Manufacturer:
Rohm Semiconductor
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EMD30T2R

Product Information

Category
Transistors (BJT) - Arrays, Pre-Biased
Packaging
Cut Tape (CT)
Series
-
Transistor Type
1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)
100mA, 200mA
Voltage - Collector Emitter Breakdown (Max)
50V, 30V
Resistor - Base (R1) (Ohms)
10k, 1k
Resistor - Emitter Base (R2) (Ohms)
10k
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 5mA, 5V / 140 @ 100mA, 2V
Vce Saturation (Max) @ Ib, Ic
300mV @ 500µA, 10mA / 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max)
500nA
Frequency - Transition
250MHz, 260MHz
Power - Max
150mW
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-666
Supplier Device Package
EMT6

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