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2SK879-GR(TE85L,F)

Description:
JFET N-CH USM
Manufacturer:
Toshiba Semiconductor and Storage
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2SK879-GR(TE85L,F)

Product Information

Category
JFETs (Junction Field Effect)
Packaging
Cut Tape (CT)
Series
-
FET Type
N-Channel
Voltage - Breakdown (V(BR)GSS)
-
Drain to Source Voltage (Vdss)
-
Current - Drain (Idss) @ Vds (Vgs=0)
2.6mA @ 10V
Current Drain (Id) - Max
-
Voltage - Cutoff (VGS off) @ Id
400mV @ 100nA
Input Capacitance (Ciss) @ Vds
8.2pF @ 10V
Resistance - RDS(On)
-
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Supplier Device Package
USM
Power - Max
100mW

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