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2SK3666-3-TB-E

Description:
JFET N-CH 10MA 200MW 3CP
Manufacturer:
ON Semiconductor
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2SK3666-3-TB-E

Product Information

Category
JFETs (Junction Field Effect)
Packaging
Cut Tape (CT)
Series
-
FET Type
N-Channel
Voltage - Breakdown (V(BR)GSS)
-
Drain to Source Voltage (Vdss)
30V
Current - Drain (Idss) @ Vds (Vgs=0)
1.2mA @ 10V
Current Drain (Id) - Max
10mA
Voltage - Cutoff (VGS off) @ Id
180mV @ 1µA
Input Capacitance (Ciss) @ Vds
4pF @ 10V
Resistance - RDS(On)
200 Ohm
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
3-CP
Power - Max
200mW

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