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DMN3029LFG-13

Description:
MOSFET N-CH 30V 5.3A PWRDI333-8
Manufacturer:
Diodes Incorporated
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DMN3029LFG-13

Product Information

Category
FETs - Single
Packaging
Cut Tape (CT)
Series
-
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
5.3A (Ta)
Rds On (Max) @ Id, Vgs
18.6 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
1.8V @ 250µA
Gate Charge (Qg) @ Vgs
11.3nC @ 10V
Input Capacitance (Ciss) @ Vds
580pF @ 15V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
8-PowerVDFN
Supplier Device Package
PowerDI3333-8

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