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FQI4N20LTU

Description:
MOSFET N-CH 200V 3.8A I2PAK
Manufacturer:
Fairchild Semiconductor
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FQI4N20LTU

Product Information

Category
FETs - Single
Packaging
Tube
Series
QFET®
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
200V
Current - Continuous Drain (Id) @ 25°C
3.8A (Tc)
Rds On (Max) @ Id, Vgs
1.35 Ohm @ 1.9A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) @ Vgs
5.2nC @ 5V
Input Capacitance (Ciss) @ Vds
310pF @ 25V
Power - Max
3.13W
Mounting Type
Through Hole
Package / Case
TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package
I2PAK

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