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FQE10N20CTU

Description:
MOSFET N-CH 200V 4A TO-126
Manufacturer:
Fairchild Semiconductor
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FQE10N20CTU

Product Information

Category
FETs - Single
Packaging
Tube
Series
QFET®
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Standard
Drain to Source Voltage (Vdss)
200V
Current - Continuous Drain (Id) @ 25°C
4A (Tc)
Rds On (Max) @ Id, Vgs
360 mOhm @ 2A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) @ Vgs
26nC @ 10V
Input Capacitance (Ciss) @ Vds
510pF @ 25V
Power - Max
12.8W
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Supplier Device Package
TO-126

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