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SIE820DF-T1-E3

Description:
MOSFET N-CH 20V 50A 10-POLARPAK
Manufacturer:
Vishay Siliconix
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SIE820DF-T1-E3

Product Information

Category
FETs - Single
Packaging
Cut Tape (CT)
Series
TrenchFET®
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
50A (Tc)
Rds On (Max) @ Id, Vgs
3.5 mOhm @ 18A, 4.5V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) @ Vgs
143nC @ 10V
Input Capacitance (Ciss) @ Vds
4300pF @ 10V
Power - Max
104W
Mounting Type
Surface Mount
Package / Case
10-PolarPAK® (S)
Supplier Device Package
10-PolarPAK® (S)

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