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SI1070X-T1-E3

Description:
MOSFET N-CH 30V 1.2A SOT563F
Manufacturer:
Vishay Siliconix
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SI1070X-T1-E3

Product Information

Category
FETs - Single
Packaging
Cut Tape (CT)
Series
TrenchFET®
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
1.2A (Ta)
Rds On (Max) @ Id, Vgs
99 mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id
1.55V @ 250µA
Gate Charge (Qg) @ Vgs
8.3nC @ 5V
Input Capacitance (Ciss) @ Vds
385pF @ 15V
Power - Max
236mW
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-666
Supplier Device Package
SC-89-6

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