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SI1065X-T1-E3

Description:
MOSFET P-CH 12V 1.18A SOT563F
Manufacturer:
Vishay Siliconix
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SI1065X-T1-E3

Product Information

Category
FETs - Single
Packaging
Cut Tape (CT)
Series
TrenchFET®
FET Type
MOSFET P-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
12V
Current - Continuous Drain (Id) @ 25°C
1.18A (Ta)
Rds On (Max) @ Id, Vgs
130 mOhm @ 1.18A, 4.5V
Vgs(th) (Max) @ Id
950mV @ 250µA
Gate Charge (Qg) @ Vgs
10.8nC @ 5V
Input Capacitance (Ciss) @ Vds
480pF @ 6V
Power - Max
236mW
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-666
Supplier Device Package
SC-89-6

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