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STB11NM60-1

Description:
MOSFET N-CH 650V 11A I2PAK
Manufacturer:
STMicroelectronics
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STB11NM60-1

Product Information

Category
FETs - Single
Packaging
Tube
Series
MDmesh™
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Standard
Drain to Source Voltage (Vdss)
650V
Current - Continuous Drain (Id) @ 25°C
11A (Tc)
Rds On (Max) @ Id, Vgs
450 mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) @ Vgs
30nC @ 10V
Input Capacitance (Ciss) @ Vds
1000pF @ 25V
Power - Max
160W
Mounting Type
Through Hole
Package / Case
TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package
I2PAK

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