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PHD34NQ10T,118

Description:
MOSFET N-CH 100V 35A DPAK
Manufacturer:
NXP Semiconductors
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PHD34NQ10T,118

Product Information

Category
FETs - Single
Packaging
Tape & Reel (TR)
Series
TrenchMOS™
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Standard
Drain to Source Voltage (Vdss)
100V
Current - Continuous Drain (Id) @ 25°C
35A (Tc)
Rds On (Max) @ Id, Vgs
40 mOhm @ 17A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) @ Vgs
40nC @ 10V
Input Capacitance (Ciss) @ Vds
1704pF @ 25V
Power - Max
136W
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
DPAK

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