PHM30NQ10T,518
- Description：
- MOSFET N-CH 100V 37.6A 8HVSON
- Manufacturer：
- NXP Semiconductors
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Product Information
- Category
- FETs - Single
- Packaging
- Tape & Reel (TR)
- Series
- TrenchMOS™
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Logic Level Gate
- Drain to Source Voltage (Vdss)
- 100V
- Current - Continuous Drain (Id) @ 25°C
- 37.6A (Tc)
- Rds On (Max) @ Id, Vgs
- 20 mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id
- 4V @ 1mA
- Gate Charge (Qg) @ Vgs
- 53.7nC @ 10V
- Input Capacitance (Ciss) @ Vds
- 3600pF @ 25V
- Power - Max
- 62.5W
- Mounting Type
- Surface Mount
- Package / Case
- 8-VDFN Exposed Pad
- Supplier Device Package
- 8-HVSON (6x5)
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