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IPI90R1K2C3

Description:
MOSFET N-CH 900V 5.1A TO-262
Manufacturer:
Infineon Technologies
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IPI90R1K2C3

Product Information

Category
FETs - Single
Packaging
Tube
Series
CoolMOS™
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Standard
Drain to Source Voltage (Vdss)
900V
Current - Continuous Drain (Id) @ 25°C
5.1A (Tc)
Rds On (Max) @ Id, Vgs
1.2 Ohm @ 2.8A, 10V
Vgs(th) (Max) @ Id
3.5V @ 310µA
Gate Charge (Qg) @ Vgs
28nC @ 10V
Input Capacitance (Ciss) @ Vds
710pF @ 100V
Power - Max
83W
Mounting Type
Through Hole
Package / Case
TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package
PG-TO262-3

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