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IPP80N06S2L-09

Description:
MOSFET N-CH 55V 80A TO220-3
Manufacturer:
Infineon Technologies
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IPP80N06S2L-09

Product Information

Category
FETs - Single
Packaging
Tube
Series
OptiMOS™
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
55V
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
Rds On (Max) @ Id, Vgs
8.5 mOhm @ 52A, 10V
Vgs(th) (Max) @ Id
2V @ 125µA
Gate Charge (Qg) @ Vgs
105nC @ 10V
Input Capacitance (Ciss) @ Vds
2620pF @ 25V
Power - Max
190W
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
PG-TO220-3

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