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SIE810DF-T1-GE3

Description:
MOSFET N-CH D-S 20V POLARPAK
Manufacturer:
Vishay Siliconix
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SIE810DF-T1-GE3

Product Information

Category
FETs - Single
Packaging
Tape & Reel (TR)
Series
TrenchFET®
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
60A (Tc)
Rds On (Max) @ Id, Vgs
1.4 Ohm @ 25A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) @ Vgs
300nC @ 10V
Input Capacitance (Ciss) @ Vds
13000pF @ 10V
Power - Max
125W
Mounting Type
Surface Mount
Package / Case
10-PolarPAK® (L)
Supplier Device Package
10-PolarPAK® (L)

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