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SIE812DF-T1-E3

Description:
MOSFET N-CH 40V 60A 10-POLARPAK
Manufacturer:
Vishay Siliconix
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SIE812DF-T1-E3

Product Information

Category
FETs - Single
Packaging
Cut Tape (CT)
Series
TrenchFET®
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
40V
Current - Continuous Drain (Id) @ 25°C
60A (Tc)
Rds On (Max) @ Id, Vgs
2.6 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) @ Vgs
170nC @ 10V
Input Capacitance (Ciss) @ Vds
8300pF @ 20V
Power - Max
125W
Mounting Type
Surface Mount
Package / Case
10-PolarPAK® (L)
Supplier Device Package
10-PolarPAK® (L)

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