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BSP149 L6327

Description:
MOSFET N-CH 200V 660MA SOT-223
Manufacturer:
Infineon Technologies
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BSP149 L6327

Product Information

Category
FETs - Single
Packaging
Cut Tape (CT)
Series
SIPMOS®
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Depletion Mode
Drain to Source Voltage (Vdss)
200V
Current - Continuous Drain (Id) @ 25°C
660mA (Ta)
Rds On (Max) @ Id, Vgs
1.8 Ohm @ 660mA, 10V
Vgs(th) (Max) @ Id
1V @ 400µA
Gate Charge (Qg) @ Vgs
14nC @ 5V
Input Capacitance (Ciss) @ Vds
430pF @ 25V
Power - Max
1.8W
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Supplier Device Package
PG-SOT223-4

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