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SPB10N10L G

Description:
MOSFET N-CH 100V 10.3A TO-263
Manufacturer:
Infineon Technologies
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SPB10N10L G

Product Information

Category
FETs - Single
Packaging
Tape & Reel (TR)
Series
SIPMOS®
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
100V
Current - Continuous Drain (Id) @ 25°C
10.3A (Tc)
Rds On (Max) @ Id, Vgs
154 mOhm @ 8.1A, 10V
Vgs(th) (Max) @ Id
2V @ 21µA
Gate Charge (Qg) @ Vgs
22nC @ 10V
Input Capacitance (Ciss) @ Vds
444pF @ 25V
Power - Max
50W
Mounting Type
Surface Mount
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package
P-TO263-3

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