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IPD640N06L G

Description:
MOSFET N-CH 60V 18A TO-252
Manufacturer:
Infineon Technologies
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IPD640N06L G

Product Information

Category
FETs - Single
Packaging
Cut Tape (CT)
Series
OptiMOS™
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25°C
18A (Tc)
Rds On (Max) @ Id, Vgs
64 mOhm @ 18A, 10V
Vgs(th) (Max) @ Id
2V @ 16µA
Gate Charge (Qg) @ Vgs
13nC @ 10V
Input Capacitance (Ciss) @ Vds
470pF @ 30V
Power - Max
47W
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
PG-TO252-3

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