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BSS192P L6327

Description:
MOSFET P-CH 250V 190MA SOT-89
Manufacturer:
Infineon Technologies
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BSS192P L6327

Product Information

Category
FETs - Single
Packaging
Cut Tape (CT)
Series
SIPMOS®
FET Type
MOSFET P-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
250V
Current - Continuous Drain (Id) @ 25°C
190mA (Ta)
Rds On (Max) @ Id, Vgs
12 Ohm @ 190mA, 10V
Vgs(th) (Max) @ Id
2V @ 130µA
Gate Charge (Qg) @ Vgs
6.1nC @ 10V
Input Capacitance (Ciss) @ Vds
104pF @ 25V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
TO-243AA
Supplier Device Package
PG-SOT89-4

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