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BSP613P L6327

Description:
MOSFET P-CH 60V 2.9A SOT-223
Manufacturer:
Infineon Technologies
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BSP613P L6327

Product Information

Category
FETs - Single
Packaging
Cut Tape (CT)
Series
SIPMOS®
FET Type
MOSFET P-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25°C
2.9A (Ta)
Rds On (Max) @ Id, Vgs
130 mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) @ Vgs
33nC @ 10V
Input Capacitance (Ciss) @ Vds
875pF @ 25V
Power - Max
1.8W
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Supplier Device Package
PG-SOT223-4

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