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IPP12CN10N G

Description:
MOSFET N-CH 100V 67A TO-220
Manufacturer:
Infineon Technologies
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IPP12CN10N G

Product Information

Category
FETs - Single
Packaging
Tube
Series
OptiMOS™
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Standard
Drain to Source Voltage (Vdss)
100V
Current - Continuous Drain (Id) @ 25°C
67A (Tc)
Rds On (Max) @ Id, Vgs
12.9 mOhm @ 67A, 10V
Vgs(th) (Max) @ Id
4V @ 83µA
Gate Charge (Qg) @ Vgs
65nC @ 10V
Input Capacitance (Ciss) @ Vds
4320pF @ 50V
Power - Max
125W
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3

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