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IPD65R1K4CFDBTMA1

Description:
MOSFET N-CH 650V 2.8A TO-252
Manufacturer:
Infineon Technologies
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IPD65R1K4CFDBTMA1

Product Information

Category
FETs - Single
Packaging
Cut Tape (CT)
Series
CoolMOS™
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Standard
Drain to Source Voltage (Vdss)
650V
Current - Continuous Drain (Id) @ 25°C
2.8A (Tc)
Rds On (Max) @ Id, Vgs
1.4 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id
4.5V @ 100µA
Gate Charge (Qg) @ Vgs
10nC @ 10V
Input Capacitance (Ciss) @ Vds
262pF @ 100V
Power - Max
28.4W
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
PG-TO252

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