IRF1902GTRPBF
- Description：
- MOSFET N-CH 20V 4.2A 8SOIC
- Manufacturer：
- International Rectifier
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Product Information
- Category
- FETs - Single
- Packaging
- Tape & Reel (TR)
- Series
- HEXFET®
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Standard
- Drain to Source Voltage (Vdss)
- 20V
- Current - Continuous Drain (Id) @ 25°C
- 4.2A (Ta)
- Rds On (Max) @ Id, Vgs
- 85 mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id
- 700mV @ 250µA
- Gate Charge (Qg) @ Vgs
- 7.5nC @ 4.5V
- Input Capacitance (Ciss) @ Vds
- 310pF @ 15V
- Power - Max
- 2.5W
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package
- 8-SO
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