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SI3417DV-T1-GE3

Description:
MOSFET P-CHAN 30V D-S TSOP-6
Manufacturer:
Vishay Siliconix
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SI3417DV-T1-GE3

Product Information

Category
FETs - Single
Packaging
Cut Tape (CT)
Series
TrenchFET®
FET Type
MOSFET P-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
7.3A (Ta)
Rds On (Max) @ Id, Vgs
25.2 mOhm @ 7.3A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) @ Vgs
50nC @ 10V
Input Capacitance (Ciss) @ Vds
1350pF @ 15V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
6-TSOP (0.065", 1.65mm Width)
Supplier Device Package
6-TSOP

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