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BUK9E1R6-30E,127

Description:
MOSFET N-CH 30V 120A I2PAK
Manufacturer:
NXP Semiconductors
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BUK9E1R6-30E,127

Product Information

Category
FETs - Single
Packaging
Tube
Series
TrenchMOS™
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
120A (Ta)
Rds On (Max) @ Id, Vgs
1.4 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
2.1V @ 1mA
Gate Charge (Qg) @ Vgs
113nC @ 5V
Input Capacitance (Ciss) @ Vds
16150pF @ 25V
Power - Max
349W
Mounting Type
Through Hole
Package / Case
TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package
I2PAK

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